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    Hydrogen and helium implants for obtaining high-resistance layers in n-type 4H silicon carbide

    New search for: Nadella, R. K.
    New search for: Holland, O. W.
    New search for: Golecki, I.
    New search for: Engineering Foundation

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    Hydrogen and helium implants for obtaining high-resistance layers in n-type 4H silicon carbide

    New search for: Nadella, R. K.
    New search for: Holland, O. W.
    New search for: Golecki, I.
    New search for: Engineering Foundation

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Hydrogen and helium implants for obtaining high-resistance layers in n-type 4H silicon carbide

    New search for: Nadella, R. K.
    New search for: Holland, O. W.
    New search for: Golecki, I.
    New search for: Engineering Foundation

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

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    Document information
    Title:

    Hydrogen and helium implants for obtaining high-resistance layers in n-type 4H silicon carbide

    Contributors:

    Nadella, R. K. (author) / Holland, O. W. (author) / Golecki, I. / Engineering Foundation

    Conference:

    High-temperature electronic materials, devices and sensors conference ; 1998 ; San Diego; CA

    Published in:

    High-temperature electronic materials, devices and sensors conference ; 14-17

    HIGH TEMPERATURE ELECTRONIC DEVICES AND SENSORS CONFERENCE

    Publication date:

    1998-01-01

    Size:

    4 pages

    Remarks:

    IEEE cat no 98EX132

    ISBN:

    0780347375 , 0780344383

    Type of media:

    Conference paper

    Type of material:

    Print

    Language:

    English

    Keywords:

    high temperature electronic materials , electronic materials

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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