A platform for research: civil engineering, architecture and urbanism
High temperature stable metallization schemes for SiC-technology operating in air
High temperature stable metallization schemes for SiC-technology operating in air
High temperature stable metallization schemes for SiC-technology operating in air
Gottfried, K. (author) / Kriz, J. (author) / Leibelt, J. (author) / Kaufmann, C. (author) / Golecki, I. / Engineering Foundation
High-temperature electronic materials, devices and sensors conference ; 1998 ; San Diego; CA
1998-01-01
6 pages
IEEE cat no 98EX132
Conference paper
English
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
A High Temperature Stable Metallization Scheme for SiC-Technology Operating at 400C in Air
British Library Online Contents | 1998
|Metallization schemes for dielectric thin film capacitors
British Library Online Contents | 1997
|Tungsten metallization technology for high temperature silicon-on-insulator devices
British Library Online Contents | 1995
|New High Technology for Chemical Vapour Metallization
British Library Online Contents | 1999
Advanced multilevel metallization technology
British Library Online Contents | 1996
|