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    A High Temperature Stable Metallization Scheme for SiC-Technology Operating at 400C in Air

    New search for: Gottfried, K.
    New search for: Fritsche, H.
    New search for: Kriz, J.
    New search for: Leibelt, J.
    New search for: Kaufmann, C.
    New search for: Rudolf, F.
    New search for: Gessner, T.

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    A High Temperature Stable Metallization Scheme for SiC-Technology Operating at 400C in Air

    New search for: Gottfried, K.
    New search for: Fritsche, H.
    New search for: Kriz, J.
    New search for: Leibelt, J.
    New search for: Kaufmann, C.
    New search for: Rudolf, F.
    New search for: Gessner, T.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    A High Temperature Stable Metallization Scheme for SiC-Technology Operating at 400C in Air

    New search for: Gottfried, K.
    New search for: Fritsche, H.
    New search for: Kriz, J.
    New search for: Leibelt, J.
    New search for: Kaufmann, C.
    New search for: Rudolf, F.
    New search for: Gessner, T.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

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    Document information
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    Document information
    Title:

    A High Temperature Stable Metallization Scheme for SiC-Technology Operating at 400C in Air

    Contributors:

    Gottfried, K. (author) / Fritsche, H. (author) / Kriz, J. (author) / Leibelt, J. (author) / Kaufmann, C. (author) / Rudolf, F. (author) / Gessner, T. (author)

    Published in:

    MATERIALS SCIENCE FORUM ; 264/268 ; 795-798

    Publication date:

    1998-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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