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Tungsten metallization technology for high temperature silicon-on-insulator devices

Chen, J. / Colinge, J.-P.

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Tungsten metallization technology for high temperature silicon-on-insulator devices

Chen, J. / Colinge, J.-P.

Tungsten metallization technology for high temperature silicon-on-insulator devices

Chen, J. / Colinge, J.-P.

Access

Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Tungsten metallization technology for high temperature silicon-on-insulator devices

Contributors:

Chen, J. (author) / Colinge, J.-P. (author) / Fricke, K. / Krozer, V.

Published in:

High Temperature Electronics: Materials Devices Applications ; 18

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 29

Publication date:

1995-01-01

Size:

18 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

Unknown

Classification:

DDC: 620.11

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