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Highly charged ion-secondary ion mass spectrometry (HCl-SIMS): toward metrology solutions for sub-100-nm technology nodes (Invited Paper) [4468-06]
Highly charged ion-secondary ion mass spectrometry (HCl-SIMS): toward metrology solutions for sub-100-nm technology nodes (Invited Paper) [4468-06]
Highly charged ion-secondary ion mass spectrometry (HCl-SIMS): toward metrology solutions for sub-100-nm technology nodes (Invited Paper) [4468-06]
Schenkel, T. (author) / Kraemer, A. (author) / Leung, K. N. (author) / Hamza, A. V. (author) / McDonald, J. W. (author) / Schneider, D. H. (author) / Knystautas, E. J. / Kirk, W. P. / Browning, V. / International Society for Optical Engineering
Conference, Engineering thin films with ion beams, nanoscale diagnostics, and molecular manufacturing ; 2001 ; San Diego, CA
2001-01-01
12 pages
Conference paper
English
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British Library Conference Proceedings | 2001
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|SIMS — Secondary Ion Mass Spectrometry
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British Library Conference Proceedings | 2001
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