Deep level transient spectroscopy investigation of GaAs grown by atomic layer molecular beam epitaxy

Bosacchi, A. / Gombia, E. / Madella, M. et al. | British Library Online Contents | 1994

Investigation of whisker defects on molecular beam epitaxy grown GaAs layers

Kadhim, N. J. / Mukherjee, D. | British Library Online Contents | 1996

Investigation of ripple defects on molecular beam epitaxy grown GaAs layers

Kadhim, N. J. / Mukherjee, D. / Mehta, M. | British Library Online Contents | 1993

Investigation of crystal properties of TmP/GaAs and GaAs/TmP/GaAs heterostructures grown by molecular beam epitaxy

Lin, C. H. / Hwu, R. J. / Sadwick, L. P. | British Library Online Contents | 2001

Preparation by molecular beam epitaxy and atomic layer molecular beam epitaxy and characterization of InAs layers 1 monolayer thick in GaAs-based structures

Ferrari, C. / Bocchi, C. / Bosacchi, A. et al. | British Library Online Contents | 1994