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    Deep level transient spectroscopy investigation of GaAs grown by atomic layer molecular beam epitaxy

    New search for: Bosacchi, A.
    New search for: Gombia, E.
    New search for: Madella, M.
    New search for: Mosca, R.
    New search for: Fornani, R.

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    Deep level transient spectroscopy investigation of GaAs grown by atomic layer molecular beam epitaxy

    New search for: Bosacchi, A.
    New search for: Gombia, E.
    New search for: Madella, M.
    New search for: Mosca, R.
    New search for: Fornani, R.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Deep level transient spectroscopy investigation of GaAs grown by atomic layer molecular beam epitaxy

    New search for: Bosacchi, A.
    New search for: Gombia, E.
    New search for: Madella, M.
    New search for: Mosca, R.
    New search for: Fornani, R.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Deep level transient spectroscopy investigation of GaAs grown by atomic layer molecular beam epitaxy

    Contributors:

    Bosacchi, A. (author) / Gombia, E. (author) / Madella, M. (author) / Mosca, R. (author) / Fornani, R.

    Published in:

    2nd International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies ; 400

    MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 28

    Publication date:

    1994-01-01

    Size:

    400 pages

    ISSN:

    0921-5107

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    Unknown

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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