A platform for research: civil engineering, architecture and urbanism
Investigation of the relaxation of excess carriers in SiGe-heterostructures by photothermal measurement
Investigation of the relaxation of excess carriers in SiGe-heterostructures by photothermal measurement
Investigation of the relaxation of excess carriers in SiGe-heterostructures by photothermal measurement
Geiler, H. D. (author) / Kruegel, S. (author) / Nuetzel, J. (author) / Friess, E. (author)
APPLIED SURFACE SCIENCE ; 63 ; 260
1993-01-01
260 pages
Article (Journal)
Unknown
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Low-temperature strain relaxation in SiGe/Si heterostructures implanted with Ge+ ions
British Library Online Contents | 2003
|Hole band nonparabolicity and effective mass measurement in p-SiGe/Ge heterostructures
British Library Online Contents | 2006
|Investigation of SiGe/Si - Heterostructures with High Resolution X-Ray Diffraction Methods
British Library Online Contents | 2000
|British Library Online Contents | 1996
|Measurement of the Lifetime of Photo-Generated Free Carriers in SiGe Waveguides
British Library Online Contents | 2007
|