Low-temperature strain relaxation in SiGe/Si heterostructures implanted with Ge+ ions: Fid-Bau Portal

Low-temperature strain relaxation in SiGe/Si heterostructures implanted with Ge+ ions

Avrutin, V. S. / Izyumskaya, N. F. / Vyatkin, A. F. / Zinenko, V. I. / Agafonov, Y. A. / Irzhak, D. V. / Roshchupkin, D. V. / Steinman, E. A. / Vdovin, V. I. / Yugova, T. G.

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Low-temperature strain relaxation in SiGe/Si heterostructures implanted with Ge+ ions

Avrutin, V. S. / Izyumskaya, N. F. / Vyatkin, A. F. / Zinenko, V. I. / Agafonov, Y. A. / Irzhak, D. V. / Roshchupkin, D. V. / Steinman, E. A. / Vdovin, V. I. / Yugova, T. G.

Low-temperature strain relaxation in SiGe/Si heterostructures implanted with Ge+ ions

Avrutin, V. S. / Izyumskaya, N. F. / Vyatkin, A. F. / Zinenko, V. I. / Agafonov, Y. A. / Irzhak, D. V. / Roshchupkin, D. V. / Steinman, E. A. / Vdovin, V. I. / Yugova, T. G.

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Title:

Low-temperature strain relaxation in SiGe/Si heterostructures implanted with Ge+ ions

Contributors:

Avrutin, V. S. (author) / Izyumskaya, N. F. (author) / Vyatkin, A. F. (author) / Zinenko, V. I. (author) / Agafonov, Y. A. (author) / Irzhak, D. V. (author) / Roshchupkin, D. V. (author) / Steinman, E. A. (author) / Vdovin, V. I. (author) / Yugova, T. G. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 100 ; 35-39

Publication date:

2003-01-01

Size:

5 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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