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    Si Doping of GaAs Grown by Molecular Beam Epitaxy on Different Substrate Orientations

    New search for: Pavesi, L.
    New search for: Piazza, F.
    New search for: Harrison, I.
    New search for: Henini, M.
    New search for: Taguchi, T.

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    Si Doping of GaAs Grown by Molecular Beam Epitaxy on Different Substrate Orientations

    New search for: Pavesi, L.
    New search for: Piazza, F.
    New search for: Harrison, I.
    New search for: Henini, M.
    New search for: Taguchi, T.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Si Doping of GaAs Grown by Molecular Beam Epitaxy on Different Substrate Orientations

    New search for: Pavesi, L.
    New search for: Piazza, F.
    New search for: Harrison, I.
    New search for: Henini, M.
    New search for: Taguchi, T.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Si Doping of GaAs Grown by Molecular Beam Epitaxy on Different Substrate Orientations

    Contributors:

    Pavesi, L. (author) / Piazza, F. (author) / Harrison, I. (author) / Henini, M. (author) / Taguchi, T.

    Published in:

    Shallow Impurities in Semiconductors ; 387

    MATERIALS SCIENCE FORUM

    Publication date:

    1993-01-01

    Size:

    387 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    Unknown

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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