On the accumulation capacitance of Si~3N~4/Si/GaAs structures fabricated in an electron cyclotron resonance plasma: Fid-Bau Portal

On the accumulation capacitance of Si~3N~4/Si/GaAs structures fabricated in an electron cyclotron resonance plasma

Ivanco, J. / Balvinsky, O. E. / Thurzo, I. / Bartos, J.

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On the accumulation capacitance of Si~3N~4/Si/GaAs structures fabricated in an electron cyclotron resonance plasma

Ivanco, J. / Balvinsky, O. E. / Thurzo, I. / Bartos, J.

On the accumulation capacitance of Si~3N~4/Si/GaAs structures fabricated in an electron cyclotron resonance plasma

Ivanco, J. / Balvinsky, O. E. / Thurzo, I. / Bartos, J.

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Check availability in my library

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Document information

Title:

On the accumulation capacitance of Si~3N~4/Si/GaAs structures fabricated in an electron cyclotron resonance plasma

Contributors:

Ivanco, J. (author) / Balvinsky, O. E. (author) / Thurzo, I. (author) / Bartos, J. (author)

Published in:

APPLIED SURFACE SCIENCE ; 72 ; 31

Publication date:

1993-01-01

Size:

31 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

Unknown

Classification:

DDC: 621.35

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