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    Low temperature molecular beam epitaxy of Al(Ga)InAs on InP and its application to high electron mobility transistor structures

    New search for: Kuenzel, H.
    New search for: Boettcher, J.
    New search for: Hase, A.
    New search for: Heedt, C.

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    Low temperature molecular beam epitaxy of Al(Ga)InAs on InP and its application to high electron mobility transistor structures

    New search for: Kuenzel, H.
    New search for: Boettcher, J.
    New search for: Hase, A.
    New search for: Heedt, C.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Low temperature molecular beam epitaxy of Al(Ga)InAs on InP and its application to high electron mobility transistor structures

    New search for: Kuenzel, H.
    New search for: Boettcher, J.
    New search for: Hase, A.
    New search for: Heedt, C.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

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    Document information
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    Document information
    Title:

    Low temperature molecular beam epitaxy of Al(Ga)InAs on InP and its application to high electron mobility transistor structures

    Contributors:

    Kuenzel, H. (author) / Boettcher, J. (author) / Hase, A. (author) / Heedt, C. (author)

    Published in:

    MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 22 ; 89

    Publication date:

    1993-01-01

    Size:

    89 pages

    ISSN:

    0921-5107

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    Unknown

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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