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    Analysis of indium surface segregation in molecular beam epitaxy of InGaAs/GaAs quantum wells

    New search for: Yamaguchi, K.
    New search for: Okada, T.
    New search for: Hiwatashi, F.

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    Analysis of indium surface segregation in molecular beam epitaxy of InGaAs/GaAs quantum wells

    New search for: Yamaguchi, K.
    New search for: Okada, T.
    New search for: Hiwatashi, F.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Analysis of indium surface segregation in molecular beam epitaxy of InGaAs/GaAs quantum wells

    New search for: Yamaguchi, K.
    New search for: Okada, T.
    New search for: Hiwatashi, F.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
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    Document information
    Similar titles

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    Document information
    Title:

    Analysis of indium surface segregation in molecular beam epitaxy of InGaAs/GaAs quantum wells

    Contributors:

    Yamaguchi, K. (author) / Okada, T. (author) / Hiwatashi, F. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 117/118 ; 700-704

    Publication date:

    1997-01-01

    Size:

    5 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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