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    Amorphization of silicon by high dose germanium ion implantation with no external cooling mechanism

    New search for: Xia, Z.
    New search for: Saarilahti, J.
    New search for: Ristolainen, E.
    New search for: Eraenen, S.

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    Amorphization of silicon by high dose germanium ion implantation with no external cooling mechanism

    New search for: Xia, Z.
    New search for: Saarilahti, J.
    New search for: Ristolainen, E.
    New search for: Eraenen, S.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Amorphization of silicon by high dose germanium ion implantation with no external cooling mechanism

    New search for: Xia, Z.
    New search for: Saarilahti, J.
    New search for: Ristolainen, E.
    New search for: Eraenen, S.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Amorphization of silicon by high dose germanium ion implantation with no external cooling mechanism

    Contributors:

    Xia, Z. (author) / Saarilahti, J. (author) / Ristolainen, E. (author) / Eraenen, S. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 78 ; 321

    Publication date:

    1994-01-01

    Size:

    321 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    Unknown

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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