Fachinformationsdienst BAUdigital

A platform for research: civil engineering, architecture and urbanism

    GaN Grown Using Trimethylgallium and Triethylgallium

    New search for: Saxler, A.
    New search for: Kung, P.
    New search for: Zhang, X.
    New search for: Walker, D.
    New search for: Solomon, J.
    New search for: Mitchel, W. C.
    New search for: Razeghi, M.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    GaN Grown Using Trimethylgallium and Triethylgallium

    New search for: Saxler, A.
    New search for: Kung, P.
    New search for: Zhang, X.
    New search for: Walker, D.
    New search for: Solomon, J.
    New search for: Mitchel, W. C.
    New search for: Razeghi, M.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    GaN Grown Using Trimethylgallium and Triethylgallium

    New search for: Saxler, A.
    New search for: Kung, P.
    New search for: Zhang, X.
    New search for: Walker, D.
    New search for: Solomon, J.
    New search for: Mitchel, W. C.
    New search for: Razeghi, M.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    GaN Grown Using Trimethylgallium and Triethylgallium

    Contributors:

    Saxler, A. (author) / Kung, P. (author) / Zhang, X. (author) / Walker, D. (author) / Solomon, J. (author) / Mitchel, W. C. (author) / Razeghi, M. (author)

    Published in:

    MATERIALS SCIENCE FORUM ; 258/263 ; 1081-1086

    Publication date:

    1997-01-01

    Size:

    6 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

    Similar titles

    Selective epitaxial growth of GaInP by LP-MOCVD using ethyldimethylindium, trimethylindium, trimethylgallium and triethylgallium as group III sources

    Chan, S.-H. / Sze, S. M. / Chang, C.-Y. et al. | British Library Online Contents | 1994

    A comparative study of the adsorption and thermal decomposition of triethylgallium and trimethylgallium at GaAs(100) surfaces studied by electron energy loss spectroscopy

    Aquino, A. A. / Jones, T. S. | British Library Online Contents | 1996

    Chemical beam epitaxial growth of GaAs from tertiarybutylarsine and triethylgallium precursors

    Ait-Lhouss, M. / Castao, J. L. / Piqueras, J. | British Library Online Contents | 1994

    Kinetics and mechanism of atomic layer epitaxy of GaAs using trimethylgallium

    Ohno, H. / Goto, S. / Nomura, Y. et al. | British Library Online Contents | 1994

    Pulsed trimethylgallium scattering from As-stabilized and Ga-stabilized surfaces

    Sasaki, M. / Yoshida, S. | British Library Online Contents | 1994

    Back to top