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    Kinetics and mechanism of atomic layer epitaxy of GaAs using trimethylgallium

    New search for: Ohno, H.
    New search for: Goto, S.
    New search for: Nomura, Y.
    New search for: Morishita, Y.

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    Kinetics and mechanism of atomic layer epitaxy of GaAs using trimethylgallium

    New search for: Ohno, H.
    New search for: Goto, S.
    New search for: Nomura, Y.
    New search for: Morishita, Y.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Kinetics and mechanism of atomic layer epitaxy of GaAs using trimethylgallium

    New search for: Ohno, H.
    New search for: Goto, S.
    New search for: Nomura, Y.
    New search for: Morishita, Y.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

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    Document information
    Similar titles

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    Document information
    Title:

    Kinetics and mechanism of atomic layer epitaxy of GaAs using trimethylgallium

    Contributors:

    Ohno, H. (author) / Goto, S. (author) / Nomura, Y. (author) / Morishita, Y. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 82/83 ; 164

    Publication date:

    1994-01-01

    Size:

    164 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    Unknown

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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