Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3: Fid-Bau Portal

Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3

Pansila, P. / Kanomata, K. / Miura, M. / Ahmmad, B. / Kubota, S. / Hirose, F.

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Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3

Pansila, P. / Kanomata, K. / Miura, M. / Ahmmad, B. / Kubota, S. / Hirose, F.

Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3

Pansila, P. / Kanomata, K. / Miura, M. / Ahmmad, B. / Kubota, S. / Hirose, F.

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Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3

Contributors:

Pansila, P. (author) / Kanomata, K. (author) / Miura, M. (author) / Ahmmad, B. (author) / Kubota, S. (author) / Hirose, F. (author)

Published in:

APPLIED SURFACE SCIENCE ; 357 ; 1920-1927

Publication date:

2015-01-01

Size:

8 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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