Auger electron diffraction study of the initial stage of Ge heteroepitaxy on Si(001): Fid-Bau Portal

Auger electron diffraction study of the initial stage of Ge heteroepitaxy on Si(001)

Sasaki, M. / Abukawa, T. / Yeom, H. W. / Yamada, M.

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Auger electron diffraction study of the initial stage of Ge heteroepitaxy on Si(001)

Sasaki, M. / Abukawa, T. / Yeom, H. W. / Yamada, M.

Auger electron diffraction study of the initial stage of Ge heteroepitaxy on Si(001)

Sasaki, M. / Abukawa, T. / Yeom, H. W. / Yamada, M.

Access

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Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Auger electron diffraction study of the initial stage of Ge heteroepitaxy on Si(001)

Contributors:

Sasaki, M. (author) / Abukawa, T. (author) / Yeom, H. W. (author) / Yamada, M. (author)

Published in:

APPLIED SURFACE SCIENCE ; 82/83 ; 387

Publication date:

1994-01-01

Size:

387 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

Unknown

Classification:

DDC: 621.35

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