X-ray photoelectron diffraction investigation of Ge segregation and film morphology during first stage heteroepitaxy of Si on Ge(001): Fid-Bau Portal

X-ray photoelectron diffraction investigation of Ge segregation and film morphology during first stage heteroepitaxy of Si on Ge(001)

Aubel, D. / Kubler, L. / Bischoff, J. L. / Simon, L. / Bolmont, D.

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X-ray photoelectron diffraction investigation of Ge segregation and film morphology during first stage heteroepitaxy of Si on Ge(001)

Aubel, D. / Kubler, L. / Bischoff, J. L. / Simon, L. / Bolmont, D.

X-ray photoelectron diffraction investigation of Ge segregation and film morphology during first stage heteroepitaxy of Si on Ge(001)

Aubel, D. / Kubler, L. / Bischoff, J. L. / Simon, L. / Bolmont, D.

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Check availability in my library

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Document information

Title:

X-ray photoelectron diffraction investigation of Ge segregation and film morphology during first stage heteroepitaxy of Si on Ge(001)

Contributors:

Aubel, D. (author) / Kubler, L. (author) / Bischoff, J. L. (author) / Simon, L. (author) / Bolmont, D. (author)

Published in:

APPLIED SURFACE SCIENCE ; 99 ; 169-183

Publication date:

1996-01-01

Size:

15 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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