Growth of thin �-SiC layers by carbonization of Si surfaces by rapid thermal processing: Fid-Bau Portal

Growth of thin -SiC layers by carbonization of Si surfaces by rapid thermal processing

Cimalla, V. / Karagodina, K. V. / Pezoldt, J. / Eichhorn, G.

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Growth of thin -SiC layers by carbonization of Si surfaces by rapid thermal processing

Cimalla, V. / Karagodina, K. V. / Pezoldt, J. / Eichhorn, G.

Growth of thin -SiC layers by carbonization of Si surfaces by rapid thermal processing

Cimalla, V. / Karagodina, K. V. / Pezoldt, J. / Eichhorn, G.

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Order at Subito €

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Document information

Title:

Growth of thin -SiC layers by carbonization of Si surfaces by rapid thermal processing

Contributors:

Cimalla, V. (author) / Karagodina, K. V. (author) / Pezoldt, J. (author) / Eichhorn, G. (author) / Fricke, K. / Krozer, V.

Published in:

High Temperature Electronics: Materials Devices Applications ; 170

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 29

Publication date:

1995-01-01

Size:

170 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

Unknown

Classification:

DDC: 620.11

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