Fachinformationsdienst BAUdigital

A platform for research: civil engineering, architecture and urbanism

    Determination of interface state density distribution and surface recombination velocity on passivated semiconductor surfaces by photoluminescence surface state spectroscopy

    New search for: Saitoh, T.
    New search for: Hasegawa, H.
    New search for: Heusler, K. E.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Determination of interface state density distribution and surface recombination velocity on passivated semiconductor surfaces by photoluminescence surface state spectroscopy

    New search for: Saitoh, T.
    New search for: Hasegawa, H.
    New search for: Heusler, K. E.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Determination of interface state density distribution and surface recombination velocity on passivated semiconductor surfaces by photoluminescence surface state spectroscopy

    New search for: Saitoh, T.
    New search for: Hasegawa, H.
    New search for: Heusler, K. E.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Determination of interface state density distribution and surface recombination velocity on passivated semiconductor surfaces by photoluminescence surface state spectroscopy

    Contributors:

    Saitoh, T. (author) / Hasegawa, H. (author) / Heusler, K. E.

    Published in:

    Passivation of Metals and Semiconductors ; 53

    MATERIALS SCIENCE FORUM

    Publication date:

    1995-01-01

    Size:

    53 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    Unknown

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

    Similar titles

    Surface state density at the semiconductor-glass interface

    Nasirov, A. A. | British Library Online Contents | 2008

    Surface state and optical property of sulfur passivated InP

    Tian, S. / Wei, Z. / Li, Y. et al. | British Library Online Contents | 2014

    Excitation power dependent photoluminescence characterization of insulator-semiconductor interfaces on near surface quantum structures passivated by silicon interface control layer technology

    Hasegawa, H. / Kodama, S. / Ikeya, K. et al. | British Library Online Contents | 1997

    Photoluminescence and capacitance-voltage characterization of GaAs surface passivated by an ultrathin GaN interface control layer

    Anantathanasarn, S. / Hasegawa, H. | British Library Online Contents | 2002

    Schottky barrier formation for passivated semiconductor surfaces

    Saiz-Pardo, R. / Rincon, R. / Flores, F. | British Library Online Contents | 1996

    Back to top