Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Determination of interface state density distribution and surface recombination velocity on passivated semiconductor surfaces by photoluminescence surface state spectroscopy
Determination of interface state density distribution and surface recombination velocity on passivated semiconductor surfaces by photoluminescence surface state spectroscopy
Determination of interface state density distribution and surface recombination velocity on passivated semiconductor surfaces by photoluminescence surface state spectroscopy
Saitoh, T. (Autor:in) / Hasegawa, H. (Autor:in) / Heusler, K. E.
01.01.1995
53 pages
Aufsatz (Zeitschrift)
Unbekannt
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Surface state density at the semiconductor-glass interface
British Library Online Contents | 2008
|Surface state and optical property of sulfur passivated InP
British Library Online Contents | 2014
|British Library Online Contents | 2002
|Schottky barrier formation for passivated semiconductor surfaces
British Library Online Contents | 1996
|