Annealing Behavior of a Light Scattering Tomography detected Defect near the Surface of Si Wafers: Fid-Bau Portal

Annealing Behavior of a Light Scattering Tomography detected Defect near the Surface of Si Wafers

Furukawa, J. / Iwaoka, N. / Furuya, H.

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Annealing Behavior of a Light Scattering Tomography detected Defect near the Surface of Si Wafers

Furukawa, J. / Iwaoka, N. / Furuya, H.

Annealing Behavior of a Light Scattering Tomography detected Defect near the Surface of Si Wafers

Furukawa, J. / Iwaoka, N. / Furuya, H.

Access

Access via TIB

Check availability in my library

Order at Subito €

Page navigation

Document information

Similar titles

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Document information

Title:

Annealing Behavior of a Light Scattering Tomography detected Defect near the Surface of Si Wafers

Contributors:

Furukawa, J. (author) / Iwaoka, N. (author) / Furuya, H. (author)

Published in:

MATERIALS SCIENCE FORUM ; 1725-1730

Publication date:

1995-01-01

Size:

6 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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