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    Investigation of oxygen precipitation related crystal defects in processed silicon wafers by infrared light scattering tomography

    New search for: Kissinger, G.
    New search for: Vanhellemont, J.
    New search for: Simoen, E.
    New search for: Claeys, C.
    New search for: Richter, H.

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    Investigation of oxygen precipitation related crystal defects in processed silicon wafers by infrared light scattering tomography

    New search for: Kissinger, G.
    New search for: Vanhellemont, J.
    New search for: Simoen, E.
    New search for: Claeys, C.
    New search for: Richter, H.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Investigation of oxygen precipitation related crystal defects in processed silicon wafers by infrared light scattering tomography

    New search for: Kissinger, G.
    New search for: Vanhellemont, J.
    New search for: Simoen, E.
    New search for: Claeys, C.
    New search for: Richter, H.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Investigation of oxygen precipitation related crystal defects in processed silicon wafers by infrared light scattering tomography

    Contributors:

    Kissinger, G. (author) / Vanhellemont, J. (author) / Simoen, E. (author) / Claeys, C. (author) / Richter, H. (author)

    Published in:

    MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 36 ; 225-229

    Publication date:

    1996-01-01

    Size:

    5 pages

    ISSN:

    0921-5107

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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