Effects of Si~3N~4 Films on Diffusion of Boron and Extended Defects in Silicon During Post-Implantation Annealing: Fid-Bau Portal

Effects of Si~3N~4 Films on Diffusion of Boron and Extended Defects in Silicon During Post-Implantation Annealing

Zaitsu, Y. / Osada, K. / Shimizu, T. / Matsumoto, S. / Yoshida, M. / Arai, E. / Abe, T.

Access

Access via TIB

Check availability in my library

Order at Subito €

Page navigation

Document information

Similar titles

Export, share and cite

Effects of Si~3N~4 Films on Diffusion of Boron and Extended Defects in Silicon During Post-Implantation Annealing

Zaitsu, Y. / Osada, K. / Shimizu, T. / Matsumoto, S. / Yoshida, M. / Arai, E. / Abe, T.

Effects of Si~3N~4 Films on Diffusion of Boron and Extended Defects in Silicon During Post-Implantation Annealing

Zaitsu, Y. / Osada, K. / Shimizu, T. / Matsumoto, S. / Yoshida, M. / Arai, E. / Abe, T.

Access

Access via TIB

Check availability in my library

Order at Subito €

Page navigation

Document information

Similar titles

Export, share and cite

Document information

Title:

Effects of Si~3N~4 Films on Diffusion of Boron and Extended Defects in Silicon During Post-Implantation Annealing

Contributors:

Zaitsu, Y. (author) / Osada, K. (author) / Shimizu, T. (author) / Matsumoto, S. (author) / Yoshida, M. (author) / Arai, E. (author) / Abe, T. (author)

Published in:

MATERIALS SCIENCE FORUM ; 1891-1896

Publication date:

1995-01-01

Size:

6 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

Cayrel, F. / Alquier, D. / Dubois, C. et al. | British Library Online Contents | 2005

Formation of Extended Defects in 4H-SiC Induced by Ion Implantation/Annealing

Nagano, M. / Tsuchida, H. / Suzuki, T. et al. | British Library Online Contents | 2009

Boron interaction with extended defects induced by He-H co-implantation in Si

Gaudin, G. / Cayrel, F. / Bongiorno, C. et al. | British Library Online Contents | 2005

Atomistic simulation of defects evolution in silicon during annealing after low energy self-ion implantation

Yu, M. / Huang, R. / Zhang, X. et al. | British Library Online Contents | 2004

A new encapsulation method of InP during post implantation annealing

Kadoun, A. / Tardy, J. / Thomas, I. et al. | British Library Online Contents | 1993