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Formation of Extended Defects in 4H-SiC Induced by Ion Implantation/Annealing
Formation of Extended Defects in 4H-SiC Induced by Ion Implantation/Annealing
Formation of Extended Defects in 4H-SiC Induced by Ion Implantation/Annealing
Nagano, M. (author) / Tsuchida, H. (author) / Suzuki, T. (author) / Hatakeyama, T. (author) / Senzaki, J. (author) / Fukuda, K. (author)
MATERIALS SCIENCE FORUM ; 615/617 ; 477-480
2009-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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