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Atomistic simulation of defects evolution in silicon during annealing after low energy self-ion implantation

Yu, M. / Huang, R. / Zhang, X. / Wang, Y. / Suzuki, K. / Oka, H.

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Atomistic simulation of defects evolution in silicon during annealing after low energy self-ion implantation

Yu, M. / Huang, R. / Zhang, X. / Wang, Y. / Suzuki, K. / Oka, H.

Atomistic simulation of defects evolution in silicon during annealing after low energy self-ion implantation

Yu, M. / Huang, R. / Zhang, X. / Wang, Y. / Suzuki, K. / Oka, H.

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Order at Subito €

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Document information

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Document information

Title:

Atomistic simulation of defects evolution in silicon during annealing after low energy self-ion implantation

Contributors:

Yu, M. (author) / Huang, R. (author) / Zhang, X. (author) / Wang, Y. (author) / Suzuki, K. (author) / Oka, H. (author)

Published in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 7 ; 13-17

Publication date:

2004-01-01

Size:

5 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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