Fachinformationsdienst BAUdigital

A platform for research: civil engineering, architecture and urbanism

    Oxygen precipitates in annealed CZ silicon wafers detected by SIRM and FTIR spectroscopy

    New search for: Veve, C.
    New search for: Stemmer, M.
    New search for: Martinuzzi, S.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Oxygen precipitates in annealed CZ silicon wafers detected by SIRM and FTIR spectroscopy

    New search for: Veve, C.
    New search for: Stemmer, M.
    New search for: Martinuzzi, S.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Oxygen precipitates in annealed CZ silicon wafers detected by SIRM and FTIR spectroscopy

    New search for: Veve, C.
    New search for: Stemmer, M.
    New search for: Martinuzzi, S.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Oxygen precipitates in annealed CZ silicon wafers detected by SIRM and FTIR spectroscopy

    Contributors:

    Veve, C. (author) / Stemmer, M. (author) / Martinuzzi, S. (author)

    Published in:

    MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 36 ; 200-203

    Publication date:

    1996-01-01

    Size:

    4 pages

    ISSN:

    0921-5107

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

    Similar titles

    Infrared characterization of oxygen precipitates in silicon wafers with different concentrations of interstitial oxygen

    Borghesi, A. / Sassella, A. / Geranzani, P. et al. | British Library Online Contents | 2000

    Comparison of high temperature annealed Czochralski silicon wafers and epitaxial wafers

    Graef, D. / Lambert, U. / Brohl, M. et al. | British Library Online Contents | 1996

    Precipitate recognition and recombination strength in annealed Czochralski silicon wafers

    Stemmer, M. / Veve, C. / Gay, N. et al. | British Library Online Contents | 1995

    Stoichiometry of oxygen precipitates in silicon

    Pivac, B. / Borghesi, A. / Geddo, M. et al. | British Library Online Contents | 1993

    Photoluminescence Due to Oxygen Precipitates Distinguished From the D Lines in Annealed Si

    Tajima, M. / Tokita, M. / Warashina, M. | British Library Online Contents | 1995

    Back to top