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Real-time optical monitoring of heteroepitaxial growth processes on Si under pulsed chemical beam epitaxy conditions
Real-time optical monitoring of heteroepitaxial growth processes on Si under pulsed chemical beam epitaxy conditions
Real-time optical monitoring of heteroepitaxial growth processes on Si under pulsed chemical beam epitaxy conditions
Dietz, N. (Autor:in) / Rossow, U. (Autor:in) / Aspnes, D. E. (Autor:in) / Bachmann, K. J. (Autor:in)
APPLIED SURFACE SCIENCE ; 102 ; 47-51
01.01.1996
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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