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Doping and microwave power effects on the properties of a-SiC:H and c-SiC:H films prepared using ECR-CVD
Doping and microwave power effects on the properties of a-SiC:H and c-SiC:H films prepared using ECR-CVD
Doping and microwave power effects on the properties of a-SiC:H and c-SiC:H films prepared using ECR-CVD
Yoon, S. F. (author) / Ji, R. (author) / Ahn, J. (author)
MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 41 ; 273-279
1996-01-01
7 pages
Article (Journal)
English
DDC:
620.11
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