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Doping and microwave power effects on the properties of a-SiC:H and c-SiC:H films prepared using ECR-CVD
Doping and microwave power effects on the properties of a-SiC:H and c-SiC:H films prepared using ECR-CVD
Doping and microwave power effects on the properties of a-SiC:H and c-SiC:H films prepared using ECR-CVD
Yoon, S. F. (Autor:in) / Ji, R. (Autor:in) / Ahn, J. (Autor:in)
MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 41 ; 273-279
01.01.1996
7 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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