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Formation and passivation of interface traps in irradiated n-channel power VDMOSFETs during thermal annealing
Formation and passivation of interface traps in irradiated n-channel power VDMOSFETs during thermal annealing
Formation and passivation of interface traps in irradiated n-channel power VDMOSFETs during thermal annealing
Pejovic, M. (Autor:in) / Ristic, G. (Autor:in) / Jaksic, A. (Autor:in)
APPLIED SURFACE SCIENCE ; 108 ; 141-148
01.01.1997
8 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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