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Influence of n-GaAs/i-AlGaAs heterostructure interfaces on the electrical properties of the n-GaAs channel layer
Influence of n-GaAs/i-AlGaAs heterostructure interfaces on the electrical properties of the n-GaAs channel layer
Influence of n-GaAs/i-AlGaAs heterostructure interfaces on the electrical properties of the n-GaAs channel layer
Otoki, Y. (author) / Sahara, M. (author) / Nagai, H. (author) / Sakaguchi, H. (author) / Takahashi, S. (author) / Kuma, S. (author) / Jantz, W. / Baeumler, M.
1997-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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