Spectroscopic studies of Er-centers in MOCVD grown GaN layers highly doped with Er: Fid-Bau Portal

Spectroscopic studies of Er-centers in MOCVD grown GaN layers highly doped with Er

Makarova, K. / Stachowicz, M. / Glukhanyuk, V. / Kozanecki, A. / Ugolini, C. / Lin, J. Y. / Jiang, H. X. / Zavada, J.

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Spectroscopic studies of Er-centers in MOCVD grown GaN layers highly doped with Er

Makarova, K. / Stachowicz, M. / Glukhanyuk, V. / Kozanecki, A. / Ugolini, C. / Lin, J. Y. / Jiang, H. X. / Zavada, J.

Spectroscopic studies of Er-centers in MOCVD grown GaN layers highly doped with Er

Makarova, K. / Stachowicz, M. / Glukhanyuk, V. / Kozanecki, A. / Ugolini, C. / Lin, J. Y. / Jiang, H. X. / Zavada, J.

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Title:

Spectroscopic studies of Er-centers in MOCVD grown GaN layers highly doped with Er

Contributors:

Makarova, K. (author) / Stachowicz, M. (author) / Glukhanyuk, V. (author) / Kozanecki, A. (author) / Ugolini, C. (author) / Lin, J. Y. (author) / Jiang, H. X. (author) / Zavada, J. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 146 ; 193-195

Publication date:

2008-01-01

Size:

3 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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