Hall Effect Characterization of 4H-SiC MOSFETs: Influence of Nitrogen Channel Implantation: Fid-Bau Portal

Hall Effect Characterization of 4H-SiC MOSFETs: Influence of Nitrogen Channel Implantation

Mortet, V. / Bedel-Pereira, E. / Bobo, J.F. / Cristiano, F. / Strenger, C. / Uhnevionak, V. / Burenkov, A. / Bauer, A.J.

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Hall Effect Characterization of 4H-SiC MOSFETs: Influence of Nitrogen Channel Implantation

Mortet, V. / Bedel-Pereira, E. / Bobo, J.F. / Cristiano, F. / Strenger, C. / Uhnevionak, V. / Burenkov, A. / Bauer, A.J.

Hall Effect Characterization of 4H-SiC MOSFETs: Influence of Nitrogen Channel Implantation

Mortet, V. / Bedel-Pereira, E. / Bobo, J.F. / Cristiano, F. / Strenger, C. / Uhnevionak, V. / Burenkov, A. / Bauer, A.J.

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Title:

Hall Effect Characterization of 4H-SiC MOSFETs: Influence of Nitrogen Channel Implantation

Contributors:

Mortet, V. (author) / Bedel-Pereira, E. (author) / Bobo, J.F. (author) / Cristiano, F. (author) / Strenger, C. (author) / Uhnevionak, V. (author) / Burenkov, A. (author) / Bauer, A.J. (author) / Lebedev, A.A. / Davydov, S.Y.

Published in:

Silicon Carbide and Related Materials 2012 Selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6, 2012, St. Petersburg, Russian Federation ; 525-528

MATERIALS SCIENCE FORUM ; 740/742

Publication date:

2013-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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