Effect of Post-Metal Annealing on the Quality of Thermally Grown Silicon Dioxide on 6H- and 4H-SiC: Fid-Bau Portal

Effect of Post-Metal Annealing on the Quality of Thermally Grown Silicon Dioxide on 6H- and 4H-SiC

Campi, J. / Shi, Y. / Luo, Y. / Yan, F. / Lee, Y. K. / Zhao, J. H.

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Effect of Post-Metal Annealing on the Quality of Thermally Grown Silicon Dioxide on 6H- and 4H-SiC

Campi, J. / Shi, Y. / Luo, Y. / Yan, F. / Lee, Y. K. / Zhao, J. H.

Effect of Post-Metal Annealing on the Quality of Thermally Grown Silicon Dioxide on 6H- and 4H-SiC

Campi, J. / Shi, Y. / Luo, Y. / Yan, F. / Lee, Y. K. / Zhao, J. H.

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Document information

Title:

Effect of Post-Metal Annealing on the Quality of Thermally Grown Silicon Dioxide on 6H- and 4H-SiC

Contributors:

Campi, J. (author) / Shi, Y. (author) / Luo, Y. (author) / Yan, F. (author) / Lee, Y. K. (author) / Zhao, J. H. (author)

Published in:

MATERIALS SCIENCE FORUM ; 264/268 ; 849-852

Publication date:

1998-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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