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    Interface dislocations forming during epitaxial growth of GeSi on (111) Si substrates at high temperatures

    New search for: Ernst, F.
    New search for: Messerschmidt, U.
    New search for: Heuer, A. H.

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    Interface dislocations forming during epitaxial growth of GeSi on (111) Si substrates at high temperatures

    New search for: Ernst, F.
    New search for: Messerschmidt, U.
    New search for: Heuer, A. H.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Interface dislocations forming during epitaxial growth of GeSi on (111) Si substrates at high temperatures

    New search for: Ernst, F.
    New search for: Messerschmidt, U.
    New search for: Heuer, A. H.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Interface dislocations forming during epitaxial growth of GeSi on (111) Si substrates at high temperatures

    Contributors:

    Ernst, F. (author) / Messerschmidt, U. / Heuer, A. H.

    Published in:

    Plastic Deformation of Structural Materials at High Temperatures ; 126-138

    MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- A ; 233

    Publication date:

    1997-01-01

    Size:

    13 pages

    ISSN:

    0921-5093

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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