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Evolution of Basal Plane Dislocations during 4H-SiC Epitaxial Growth
Evolution of Basal Plane Dislocations during 4H-SiC Epitaxial Growth
Evolution of Basal Plane Dislocations during 4H-SiC Epitaxial Growth
Stahlbush, R.E. (author) / Van Mil, B.L. (author) / Liu, K.X. (author) / Lew, K.K. (author) / Ward, R.L.M. (author) / Gaskill, D.K. (author) / Eddy, C.R. (author) / Zhang, X. (author) / Skowronski, M. (author)
MATERIALS SCIENCE FORUM ; 600/603 ; 317-320
2009-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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