Influence of interface dislocations on surface kinetics during epitaxial growth of InGaAs: Fid-Bau Portal

Influence of interface dislocations on surface kinetics during epitaxial growth of InGaAs

Alvarez, A. L. / Calle, F. / Valtue�a, J. F. / Faura, J. / Sanchez, M. A. / Calleja, E. / Mu�oz, E. / Morante, J. R. / Gonzalez, D. / Araujo, D.

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Influence of interface dislocations on surface kinetics during epitaxial growth of InGaAs

Alvarez, A. L. / Calle, F. / Valtue�a, J. F. / Faura, J. / Sanchez, M. A. / Calleja, E. / Mu�oz, E. / Morante, J. R. / Gonzalez, D. / Araujo, D.

Influence of interface dislocations on surface kinetics during epitaxial growth of InGaAs

Alvarez, A. L. / Calle, F. / Valtue�a, J. F. / Faura, J. / Sanchez, M. A. / Calleja, E. / Mu�oz, E. / Morante, J. R. / Gonzalez, D. / Araujo, D.

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Title:

Influence of interface dislocations on surface kinetics during epitaxial growth of InGaAs

Contributors:

Alvarez, A. L. (author) / Calle, F. (author) / Valtue�a, J. F. (author) / Faura, J. (author) / Sanchez, M. A. (author) / Calleja, E. (author) / Mu�oz, E. (author) / Morante, J. R. (author) / Gonzalez, D. (author) / Araujo, D. (author)

Published in:

APPLIED SURFACE SCIENCE ; 123/124 ; 303-307

Publication date:

1998-01-01

Size:

5 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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