Implantation-caused open volume defects in Ge after flash lamp annealing (FLA) probed by slow positron implantation spectroscopy (SPIS): Fid-Bau Portal

Implantation-caused open volume defects in Ge after flash lamp annealing (FLA) probed by slow positron implantation spectroscopy (SPIS)

Anwand, W. / Skorupa, W. / Schumann, T. / Posselt, M. / Schmidt, B. / Grotzschel, R. / Brauer, G.

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Implantation-caused open volume defects in Ge after flash lamp annealing (FLA) probed by slow positron implantation spectroscopy (SPIS)

Anwand, W. / Skorupa, W. / Schumann, T. / Posselt, M. / Schmidt, B. / Grotzschel, R. / Brauer, G.

Implantation-caused open volume defects in Ge after flash lamp annealing (FLA) probed by slow positron implantation spectroscopy (SPIS)

Anwand, W. / Skorupa, W. / Schumann, T. / Posselt, M. / Schmidt, B. / Grotzschel, R. / Brauer, G.

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Document information

Title:

Implantation-caused open volume defects in Ge after flash lamp annealing (FLA) probed by slow positron implantation spectroscopy (SPIS)

Contributors:

Anwand, W. (author) / Skorupa, W. (author) / Schumann, T. (author) / Posselt, M. (author) / Schmidt, B. (author) / Grotzschel, R. (author) / Brauer, G. (author)

Published in:

APPLIED SURFACE SCIENCE ; 255 ; 81-83

Publication date:

2008-01-01

Size:

3 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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