Characterization of vacancy-like defects in boron-implanted silicon with slow positrons: Fid-Bau Portal

Characterization of vacancy-like defects in boron-implanted silicon with slow positrons

Gebauer, J. / Eichler, S. / Krause-Rehberg, R. / Polity, A.

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Characterization of vacancy-like defects in boron-implanted silicon with slow positrons

Gebauer, J. / Eichler, S. / Krause-Rehberg, R. / Polity, A.

Characterization of vacancy-like defects in boron-implanted silicon with slow positrons

Gebauer, J. / Eichler, S. / Krause-Rehberg, R. / Polity, A.

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Document information

Title:

Characterization of vacancy-like defects in boron-implanted silicon with slow positrons

Contributors:

Gebauer, J. (author) / Eichler, S. (author) / Krause-Rehberg, R. (author) / Polity, A. (author)

Published in:

APPLIED SURFACE SCIENCE ; 116 ; 215-221

Publication date:

1997-01-01

Size:

7 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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