Electrical properties of CoSi~2 precipitates in cobalt-implanted silicon: a conducting atomic force microscopy study: Fid-Bau Portal

Electrical properties of CoSi~2 precipitates in cobalt-implanted silicon: a conducting atomic force microscopy study

Mao, J. M. / Xu, J. B. / Peng, Q. C. / Wong, S. P. / Wilson, I. H.

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Electrical properties of CoSi~2 precipitates in cobalt-implanted silicon: a conducting atomic force microscopy study

Mao, J. M. / Xu, J. B. / Peng, Q. C. / Wong, S. P. / Wilson, I. H.

Electrical properties of CoSi~2 precipitates in cobalt-implanted silicon: a conducting atomic force microscopy study

Mao, J. M. / Xu, J. B. / Peng, Q. C. / Wong, S. P. / Wilson, I. H.

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Access via TIB

Check availability in my library

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Document information

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Document information

Title:

Electrical properties of CoSi~2 precipitates in cobalt-implanted silicon: a conducting atomic force microscopy study

Contributors:

Mao, J. M. (author) / Xu, J. B. (author) / Peng, Q. C. (author) / Wong, S. P. (author) / Wilson, I. H. (author)

Published in:

JOURNAL OF MATERIALS SCIENCE LETTERS ; 17 ; 219-222

Publication date:

1998-01-01

Size:

4 pages

ISSN:

0261-8028

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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