Conductivity Control of SiC by In-Situ Doping and Ion Implantation: Fid-Bau Portal

Conductivity Control of SiC by In-Situ Doping and Ion Implantation

Kimoto, T. / Itoh, A. / Inoue, N. / Takemura, O. / Yamamoto, T. / Nakajima, T. / Matsunami, H.

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Conductivity Control of SiC by In-Situ Doping and Ion Implantation

Kimoto, T. / Itoh, A. / Inoue, N. / Takemura, O. / Yamamoto, T. / Nakajima, T. / Matsunami, H.

Conductivity Control of SiC by In-Situ Doping and Ion Implantation

Kimoto, T. / Itoh, A. / Inoue, N. / Takemura, O. / Yamamoto, T. / Nakajima, T. / Matsunami, H.

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Title:

Conductivity Control of SiC by In-Situ Doping and Ion Implantation

Contributors:

Kimoto, T. (author) / Itoh, A. (author) / Inoue, N. (author) / Takemura, O. (author) / Yamamoto, T. (author) / Nakajima, T. (author) / Matsunami, H. (author)

Published in:

MATERIALS SCIENCE FORUM ; 264/268 ; 675-680

Publication date:

1998-01-01

Size:

6 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

Pernot, J. / Camassel, J. / Contreras, S. et al. | British Library Online Contents | 2001

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N-type implantation doping of GaN

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Beryllium Implantation Doping of Silicon Carbide

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