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Conductivity Control of SiC by In-Situ Doping and Ion Implantation
Conductivity Control of SiC by In-Situ Doping and Ion Implantation
Conductivity Control of SiC by In-Situ Doping and Ion Implantation
Kimoto, T. (Autor:in) / Itoh, A. (Autor:in) / Inoue, N. (Autor:in) / Takemura, O. (Autor:in) / Yamamoto, T. (Autor:in) / Nakajima, T. (Autor:in) / Matsunami, H. (Autor:in)
MATERIALS SCIENCE FORUM ; 264/268 ; 675-680
01.01.1998
6 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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