4H-SiC Wafers Studied by X-Ray Absorption and Raman Scattering: Fid-Bau Portal

4H-SiC Wafers Studied by X-Ray Absorption and Raman Scattering

Xu, Q. / Sun, H.Y. / Chen, C. / Jang, L.Y. / Rusli, E. / Mendis, S.P. / Tin, C.C. / Qiu, Z.R. / Wu, Z.Y. / Liu, C.W.

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4H-SiC Wafers Studied by X-Ray Absorption and Raman Scattering

Xu, Q. / Sun, H.Y. / Chen, C. / Jang, L.Y. / Rusli, E. / Mendis, S.P. / Tin, C.C. / Qiu, Z.R. / Wu, Z.Y. / Liu, C.W.

4H-SiC Wafers Studied by X-Ray Absorption and Raman Scattering

Xu, Q. / Sun, H.Y. / Chen, C. / Jang, L.Y. / Rusli, E. / Mendis, S.P. / Tin, C.C. / Qiu, Z.R. / Wu, Z.Y. / Liu, C.W.

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Title:

4H-SiC Wafers Studied by X-Ray Absorption and Raman Scattering

Contributors:

Xu, Q. (author) / Sun, H.Y. (author) / Chen, C. (author) / Jang, L.Y. (author) / Rusli, E. (author) / Mendis, S.P. (author) / Tin, C.C. (author) / Qiu, Z.R. (author) / Wu, Z.Y. (author) / Liu, C.W. (author)

Published in:

MATERIALS SCIENCE FORUM ; 717/720 ; 509-512

Publication date:

2012-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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