Raman characterization and stress analysis of AlN:Er^3^+ epilayers grown on sapphire and silicon substrates: Fid-Bau Portal

Raman characterization and stress analysis of AlN:Er^3^+ epilayers grown on sapphire and silicon substrates

Kallel, T. / Dammak, M. / Wang, J. / Jadwisienczak, W. M.

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Raman characterization and stress analysis of AlN:Er^3^+ epilayers grown on sapphire and silicon substrates

Kallel, T. / Dammak, M. / Wang, J. / Jadwisienczak, W. M.

Raman characterization and stress analysis of AlN:Er^3^+ epilayers grown on sapphire and silicon substrates

Kallel, T. / Dammak, M. / Wang, J. / Jadwisienczak, W. M.

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Check availability in my library

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Document information

Title:

Raman characterization and stress analysis of AlN:Er^3^+ epilayers grown on sapphire and silicon substrates

Contributors:

Kallel, T. (author) / Dammak, M. (author) / Wang, J. (author) / Jadwisienczak, W. M. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B ADVANCED FUNCTIONAL SOLID STATE MATERIALS ; 187 ; 46-52

Publication date:

2014-01-01

Size:

7 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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