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    High Growth Rate of -SIC by Sublimation Epitaxy

    New search for: Syvaejaervi, M.
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    High Growth Rate of -SIC by Sublimation Epitaxy

    New search for: Syvaejaervi, M.
    New search for: Yakimova, R.
    New search for: MacMillan, M. F.
    New search for: Tuominen, M.
    New search for: Hemmingsson, C. G.
    New search for: Ivanov, I. G.
    New search for: Janzen, E.
    New search for: Pensl, G.
    New search for: Morkoc, H.
    New search for: Monemar, B.
    New search for: Janzen, E.

    Access

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    Check availability in my library
    Order at Subito €

    High Growth Rate of -SIC by Sublimation Epitaxy

    New search for: Syvaejaervi, M.
    New search for: Yakimova, R.
    New search for: MacMillan, M. F.
    New search for: Tuominen, M.
    New search for: Hemmingsson, C. G.
    New search for: Ivanov, I. G.
    New search for: Janzen, E.
    New search for: Pensl, G.
    New search for: Morkoc, H.
    New search for: Monemar, B.
    New search for: Janzen, E.

    Access

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    Document information
    Title:

    High Growth Rate of -SIC by Sublimation Epitaxy

    Contributors:

    Syvaejaervi, M. (author) / Yakimova, R. (author) / MacMillan, M. F. (author) / Tuominen, M. (author) / Kakanakova-Georgieva, A. (author) / Hemmingsson, C. G. (author) / Ivanov, I. G. (author) / Janzen, E. (author) / Pensl, G. / Morkoc, H.

    Published in:

    Silicon Carbide, III-Nitrides and Related Materials ; 143-146

    MATERIALS SCIENCE FORUM ; 264/268

    Publication date:

    1998-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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