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Homoepitaxial Growth of Cubic Silicon Carbide by Sublimation Epitaxy

Furusho, T. / Miyanagi, T. / Okui, Y. / Ohshima, S. / Nishino, S.

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Homoepitaxial Growth of Cubic Silicon Carbide by Sublimation Epitaxy

Furusho, T. / Miyanagi, T. / Okui, Y. / Ohshima, S. / Nishino, S.

Homoepitaxial Growth of Cubic Silicon Carbide by Sublimation Epitaxy

Furusho, T. / Miyanagi, T. / Okui, Y. / Ohshima, S. / Nishino, S.

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Document information

Title:

Homoepitaxial Growth of Cubic Silicon Carbide by Sublimation Epitaxy

Contributors:

Furusho, T. (author) / Miyanagi, T. (author) / Okui, Y. (author) / Ohshima, S. (author) / Nishino, S. (author)

Published in:

MATERIALS SCIENCE FORUM ; 389/393 ; 279-282

Publication date:

2002-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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