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    Defect structures in heavily In-doped II-VI semiconductors

    New search for: Ostheimer, V.
    New search for: Filz, T.
    New search for: Hamann, J.
    New search for: Lauer, S.
    New search for: Weber, D.
    New search for: Wolf, H.
    New search for: Wichert, T.
    New search for: Davies, G.
    New search for: Nazare, M. H.

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    Defect structures in heavily In-doped II-VI semiconductors

    New search for: Ostheimer, V.
    New search for: Filz, T.
    New search for: Hamann, J.
    New search for: Lauer, S.
    New search for: Weber, D.
    New search for: Wolf, H.
    New search for: Wichert, T.
    New search for: Davies, G.
    New search for: Nazare, M. H.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Defect structures in heavily In-doped II-VI semiconductors

    New search for: Ostheimer, V.
    New search for: Filz, T.
    New search for: Hamann, J.
    New search for: Lauer, S.
    New search for: Weber, D.
    New search for: Wolf, H.
    New search for: Wichert, T.
    New search for: Davies, G.
    New search for: Nazare, M. H.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

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    Check availability in my library
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    Document information
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    Document information
    Title:

    Defect structures in heavily In-doped II-VI semiconductors

    Contributors:

    Ostheimer, V. (author) / Filz, T. (author) / Hamann, J. (author) / Lauer, S. (author) / Weber, D. (author) / Wolf, H. (author) / Wichert, T. (author) / Davies, G. / Nazare, M. H.

    Published in:

    Defects in Semiconductors ICDS-19 ; 1341-1346

    MATERIALS SCIENCE FORUM ; 258/263

    Publication date:

    1997-01-01

    Size:

    6 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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