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Defect Study of Heavily n-Type Doped III-V Compound Semiconductors by Means of Pulsed Positron Beam Measurement
Defect Study of Heavily n-Type Doped III-V Compound Semiconductors by Means of Pulsed Positron Beam Measurement
Defect Study of Heavily n-Type Doped III-V Compound Semiconductors by Means of Pulsed Positron Beam Measurement
Cho, Y. K. (author) / Leem, J. Y. (author) / Lee, C. (author) / Noh, S. K. (author) / Suzuki, R. (author) / Odaira, T. (author) / Mikado, T. (author) / Jean, Y. C. / Eldrup, M. / Schrader, D. M.
1997-01-01
3 pages
Article (Journal)
English
DDC:
620.11
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